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| NUD4011 Low Current LED Driver This device is designed to replace discrete solutions for driving LEDs in AC/DC high voltage applications (up to 200 V). An external resistor allows the circuit designer to set the drive current for different LED arrays. This discrete integration technology eliminates individual components by combining them into a single package, which results in a significant reduction of both system cost and board space. The device is a small surface mount package (SO-8). Features http://onsemi.com PIN CONFIGURATION AND SCHEMATIC Vin Boost Rext PWM 1 2 3 4 Current Set Point 8 7 6 5 Iout Iout Iout Iout * * * * * * * * Supplies Constant LED Current for Varying Input Voltages External Resistor Allows Designer to Set Current - up to 70 mA Offered in Surface Mount Package Technology (SO-8) Pb-Free Package is Available Maintains a Constant Light Output During Battery Drain One Device can be used for Many Different LED Products Reduces Board Space and Component Count Simplifies Circuit and System Designs Benefits Typical Applications * Portables: For Battery Back-up Applications, also Simple Ni-CAD * * Battery Charging Industrial: General Lighting Applications and Small Appliances Automotive: Tail Lights, Directional Lights, Back-up Light, Dome Light 8 8 1 SO-8 CASE 751 1 MARKING DIAGRAM 4011 AYWWG G PIN FUNCTION DESCRIPTION Pin 1 2 3 4 Symbol Vin Boost Rext PWM Description Positive input voltage to the device This pin may be used to drive an external transistor as described in the App Note AND8198/D. An external resistor between Rext and Vin pins sets different current levels for different application needs For high voltage applications (higher than 48 V), pin 4 is connected to the LEDs array. For low voltage applications (lower than 48 V), pin 4 is connected to ground. The LEDs are connected from these pins to ground A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NUD4011DR2 NUD4011DR2G Package SO-8 Shipping 2500 / Tape & Reel 5, 6, 7, 8 Iout SO-8 2500 / Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 June, 2006 - Rev. 3 1 Publication Order Number: NUD4011/D NUD4011 MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Input Voltage Output Current (For Vdrop 16 V) (Note 1) Output Voltage Human Body Model (HBM) Symbol Vin Iout Vout ESD Value 200 70 198 500 Unit V mA V V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Vdrop = Vin - 0.7 V - VLEDs. THERMAL CHARACTERISTICS Characteristic Operating Ambient Temperature Maximum Junction Temperature Storage Temperature Total Power Dissipation (Note 2) Derating above 25C (Figure 3) Thermal Resistance, Junction-to-Ambient (Note 2) Thermal Resistance, Junction-to-Lead (Note 2) 2. Mounted on FR-4 board, 2 in sq pad, 1 oz coverage. Symbol TA TJ TSTG PD RqJA RqJL Value -40 to +125 150 -55 to +150 1.13 9.0 110 77 Unit C C C W mW/C C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Output Current1 (Note 3) (Vin = 120 Vdc, Rext = 24 W, VLEDs = 90 V) Output Current2 (Note 3) (Vin = 200 Vdc, Rext = 68 W, VLEDs = 120 V) Bias Current (Vin = 120 Vdc, Rext = Open, Rshunt = 80 kW) Voltage Overhead (Note 4) 3. Device's pin 4 connected to the LEDs array (as shown in Figure 5). 4. Vover = Vin - VLEDs. Symbol Iout1 Iout2 IBias Vover Min 26.0 11.5 - 5.0 Typ 27.5 14.0 1.1 - Max 29.5 15.5 2.0 Unit mA mA mA V - http://onsemi.com 2 NUD4011 TYPICAL PERFORMANCE CURVES (TA = 25C unless otherwise noted) 1000 0.9 0.8 0.7 100 Vsense (V) 1 10 IOUT (mA) 100 1000 Rext, W 0.6 0.5 0.4 0.3 0.2 0.1 1 0.0 -40 -25 -10 5 20 35 50 65 80 95 110 125 140 155 TJ, JUNCTION TEMPERATURE (C) 10 Figure 1. Output Current (IOUT) vs. External Resistor (Rext) 1.200 OUTPUT CURRENT, NORMALIZED PD, POWER DISSIPATION (W) 1.000 0.800 0.600 0.400 0.200 0.000 25 1.2 1.0 0.8 0.6 0.4 0.2 Figure 2. Vsense vs. Junction Temperature 35 45 55 65 75 85 95 105 115 125 0.0 -40 -25 -10 5 20 35 50 65 80 95 110 125 140 155 TA, AMBIENT TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 3. Total Power Dissipation (PD) vs. Ambient Temperature (TA) Figure 4. Current Regulation vs. Junction Temperature http://onsemi.com 3 NUD4011 APPLICATION INFORMATION Design Guide for DC Applications NUD4011 Vin 1 2 3 4 Current Set Point 8 7 6 5 Iout Iout Iout Iout 1. Define LED's current: a. ILED = 30 mA 2. Calculate Resistor Value for Rext: a. Rext = Vsense (see Figure 2) / ILED b. Rext = 0.7(TJ = 25 C) / 0.030 = 24 W 3. Define Vin: a. Per example in Figure 5, Vin = 120 Vdc 4. Define VLED @ ILED per LED supplier's data sheet: per example in Figure 5, a. VLED = 3.0 V (30 LEDs in series) b. VLEDs = 90 V 5. Calculate Vdrop across the NUD4001 device: a. Vdrop = Vin - Vsense - VLEDs b. Vdrop = 120 V - 0.7 V - 90 V c. Vdrop = 29.3 V 6. Calculate Power Dissipation on the NUD4001 device's driver: a. PD_driver = Vdrop * Iout b. PD_driver = 29.3 V 0.030 A c. PD_driver = 0.879 W 7. Establish Power Dissipation on the NUD4001 device's control circuit per below formula: a. PD_control = (Vin - 1.4 - VLEDs)@ / 20,000 b. PD_control = 0.040 W 8. Calculate Total Power Dissipation on the device: a. PD_total = PD_driver + PD_control b. PD_total = 0.879 W + 0.040 W = 0.919 W 9. If PD_total > 1.13 W (or derated value per Figure 3), then select the most appropriate recourse and repeat steps 1-8: a. Reduce Vin b. Reconfigure LED array to reduce Vdrop c. Reduce Iout by increasing Rext d. Use external resistors or parallel device's configuration 10. Calculate the junction temperature using the thermal information on Page 8 and refer to Figure 4 to check the output current drop due to the calculated junction temperature. If desired, compensate it by adjusting the value of Rext. Boost Rext PWM 120 V LED1 LED2 LED30 Figure 5. 120 V Application (Series LED's Array) http://onsemi.com 4 NUD4011 APPLICATION INFORMATION (continued) Design Guide for AC Applications Full Bridge Rectifier 1 2 3 Vin 1 Boost 2 Rext + - 120 Vac 60 Hz 4 3 PWM 4 Current Set Point NUD4011 Iout 8 Iout 7 Iout 6 Iout 5 1. Define LED's current: a. ILED = 30 mA 2. Define Vin: a. Per example in Figure 5, Vin = 120 Vac 3. Define VLED @ ILED per LED supplier's data sheet: a. Per example in Figure 6, VLED = 3.0 V (30 LEDs in series) VLEDs = 90 V 4. Calculate Resistor Value for Rext: The calculation of the Rext for AC applications is totally different than for DC. This is because current conduction only occurs during the time that the ac cycles' amplitude is higher than VLEDs. Therefore Rext calculation is now dependent on the peak current value and the conduction time. a. Calculate q for VLEDs = 90 V: Sin q V = Vpeak 90 V = (120 2) Sin q q = 32.027 b. Calculate conduction time for q = 32.027. For a sinuousoidal waveform Vpeak happens at q = 90. This translates to 4.165 ms in time for a 60 Hz frequency, therefore 32.027 is 1.48 ms and finally: Conduction time = (4.165 ms - 1.48 ms) 2 = 5.37 ms c. Calculate the Ipeak needed for I(avg) = 30 mA Since a full bridge rectifier is being used (per Figure 6), the frequency of the voltage signal applied to the NUD4011 device is now 120 Hz. To simplify the calculation, it is assumed that the 120 Hz waveform is square shaped so that the following formula can be used: I(avg) = Ipeak duty cycle; If 8.33 ms is 100% duty cycle, then 5.37 ms is 64.46%, then: Ipeak = I(avg) / duty cycle Ipeak = 30 mA / 0.645 = 46 mA d. Calculate Rext Rext = 0.7 V / Ipeak Rext = 15.21 W 5. Calculate Vdrop across the NUD4011 device: a. Vdrop = Vin - Vsense - VLEDs b. Vdrop = 120 V - 0.7 V - 90 V c. Vdrop = 29.3 V LED1 LED2 LED30 Figure 6. 120 Vac Application (Series LED's array) 6. Calculate Power Dissipation on the NUD4011 device's driver: a. PD_driver = Vdrop * I(avg) b. PD_driver = 29.3 V 0.030 A c. PD_driver = 0.879 W 7. Establish Power Dissipation on the NUD4011device's control circuit per below formula: a. PD_control = (Vin - 1.4 - VLEDs)@ / 20,000 b. PD_control = 0.040 W 8. Calculate Total Power Dissipation on the device: a. PD_total = PD_driver + PD_control b. PD_total = 0.879 W + 0.040 W = 0.919 W 9. If PD_total > 1.13 W (or derated value per Figure 3), then select the most appropriate recourse and repeat steps 1-8: a. Reduce Vin b. Reconfigure LED array to reduce Vdrop c. Reduce Iout by increasing Rext d. Use external resistors or parallel device's configuration 10. Calculate the junction temperature using the thermal information on Page 8 and refer to Figure 4 to check the output current drop due to the calculated junction temperature. If desired, compensate it by adjusting the value of Rext. http://onsemi.com 5 NUD4011 TYPICAL APPLICATION CIRCUITS NUD4011 Vin 1 2 3 4 Current Set Point 8 7 6 5 Iout Iout Iout Iout Switch 35 W, 1/4 W Boost Rext PWM + - 120 Vdc LED1 LED2 LED30 Figure 7. 120 Vdc Application Circuit for a Series Array of 30 LEDs (3.0 V, 20 mA) NUD4011 Vin Full Bridge Rectifier Switch 2 1 3 1 2 3 4 Current Set Point 8 7 6 5 Iout Iout Iout Iout 30 W, 1/4 W Boost Rext PWM + - 120 Vac 60 Hz VARISTOR 200 V 4 LED1 LED2 LED30 Figure 8. 120 Vac Application Circuit for a Series Array of 30 LEDs (3.0 V, 20 mA) http://onsemi.com 6 NUD4011 TYPICAL APPLICATION CIRCUITS (continued) NUD4011 Vin 1 2 3 4 Rshunt 80 k, 1/4 W 1.0 k Q1 200 V Current Set Point 8 7 6 5 Iout Iout Iout Iout Switch 35 W, 1/4 W Boost Rext PWM + - 120 Vdc LED1 LED2 + - PWM / ENABLE LED30 Figure 9. 120 Vdc Application with PWM / Enable Function, 30 LEDs in Series (3.0 V, 20 mA) NUD4011 Vin Full Bridge Rectifier Switch 2 1 3 1 2 3 4 Rshunt 80 k, 1/4 W 1.0 k Q1 200 V Current Set Point 8 7 6 5 Iout Iout Iout Iout 35 W, 1/4 W Boost Rext + - 120 Vac 60 Hz VARISTOR 200 V 4 200 V Electrolytic Cap PWM LED1 LED2 + - PWM / ENABLE LED30 Figure 10. 120 Vac Application with PWM / Enable Function, 30 LEDs in Series (3.0 V, 20 mA) http://onsemi.com 7 NUD4011 THERMAL INFORMATION NUD4011 Power Dissipation The power dissipation of the SO-8 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RqJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SO-8 package, PD can be calculated as follows: T * TA PD + Jmax RqJA reduce the thermal resistance. Figure 11 shows how the thermal resistance changes for different copper areas. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad(R). Using a board material such as Thermal Clad or an aluminum core board, the power dissipation can be even doubled using the same footprint. 180 160 140 qJA (C/W) 120 100 80 60 The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 1.13 W. PD + 150C * 25C + 1.13 W 110C The 110C/W for the SO-8 package assumes the use of a FR-4 copper board with an area of 2 square inches with 2 oz coverage to achieve a power dissipation of 1.13 W. There are other alternatives to achieving higher dissipation from the SOIC package. One of them is to increase the copper area to 250 0 1 2 3 4 5 6 7 8 9 10 BOARD AREA (in2) Figure 11. qJA versus Board Area 1S -36.9 sq. mm -0.057 in sq. 200 R(q) (C/W) 150 100 50 0 0.000001 1S -75.8 sq. mm -0.117 in sq. 1S -150.0 sq. mm -0.233 in sq. 1S -321.5 sq. mm -0.498 in sq. 1S -681.0 sq. mm -1.056 in sq. 1S -1255.0 sq. mm -1.945 in sq. 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 TIME (sec) Figure 12. Transient Thermal Response http://onsemi.com 8 NUD4011 PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AH 5 -X- A 8 B 1 S 4 0.25 (0.010) M Y M -Y- G K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 C -Z- H D 0.25 (0.010) M SEATING PLANE N X 45 _ 0.10 (0.004) M J ZY S X S DIM A B C D G H J K M N S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 9 NUD4011/D |
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